| 摘要 |
A method of fabricating isolation layers of a semiconductor device is provided. The method includes depositing a pad oxide layer and a hard mask in sequence on a semiconductor substrate and patterning the pad oxide layer and the hard mask. Trenches may be formed by etching the substrate to a specific depth and a gap-fill insulating layer may be formed in the substrate in which the trenches have been formed. The method further includes forming a barrier layer on the gap-fill insulating layer in a region where a pattern density of an isolation layer is relatively low, then polishing and removing the gap-fill insulating layer and the barrier layer until a top surface of the hard mask is exposed. Consequently, isolation layers are gap-filled only in the trenches, yielding a regular surface on the semiconductor substrate.
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