METHOD FOR FORMING GAN TYPE SEMICONDUCTOR LIGHT EMITTING DEVICE

摘要

A method for forming a GaN type semiconductor light emitting device is provided to reduce defects by re-growing a second n type GaN layer on an etched surface. A substrate(100) for growing a GaN type semiconductor material is prepared. A first n type GaN layer(120a) is formed on the substrate. An etch process is performed to etch an upper surface of the first n type GaN layer. A second n type GaN layer(120b) is formed by performing a re-grow process on the etched part of the first n type GaN layer. An active region(130) is formed on the second n type GaN layer. A p type GaN layer(140) is formed on the active layer. A buffer layer forming process is performed to form a buffer layer(110) on the substrate before the first n type GaN layer is formed on the substrate.