发明名称 |
METHOD FOR LATERAL SEPARATION OF A SEMICONDUCTOR WAFER STACK |
摘要 |
A method for laterally dividing a semiconductor wafer (1) comprises the method steps of: providing a growth substrate (2); epitaxially growing a semiconductor layer sequence (3), which comprises a functional semiconductor layer (5), onto the growth substrate (2); applying a mask layer (10) to partial regions of the semiconductor layer sequence (3) in order to produce masked regions (11) and unmasked regions (12); implanting ions through the unmasked regions (12) in order to produce implantation regions (13) in the semiconductor wafer (1); and dividing the semiconductor wafer (1) along the implantation regions (13), wherein the growth substrate (2) or at least one part of the growth substrate (2) is separated from the semiconductor wafer. |
申请公布号 |
EP1920508(A1) |
申请公布日期 |
2008.05.14 |
申请号 |
EP20060775815 |
申请日期 |
2006.08.07 |
申请人 |
OSRAM OPTO SEMICONDUCTORS GMBH |
发明人 |
HAERLE, VOLKER;EICHLER, CHRISTOPH |
分类号 |
H01L33/00;H01L33/16;H01L33/32;H01S5/02;H01S5/323 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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