发明名称 |
P-TYPE SEMICONDUCTOR MATERIAL, SEMICONDUCTOR ELEMENT, ORGANIC ELECTROLUMINESCENT ELEMENT, AND MANUFACTURING METHOD OF P-TYPE SEMICONDUCTOR MATERIAL |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a p-type semiconductor material and a semiconductor element in which band matching is obtained between a positive hole injection layer and which are suitable for an anode electrode formable on a glass substrate and a polymer substrate. <P>SOLUTION: In the p-type semiconductor material, in a chemical compound containing Zn and Se, Ag is made to be contained by 1×10<SP>18</SP>to 5×10<SP>20</SP>cm<SP>-3</SP>. The semiconductor element is equipped with a substrate and a p-type electrode layer which is positioned on this substrate and has either one of the p-type semiconductor material. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
申请公布号 |
JP2008108471(A) |
申请公布日期 |
2008.05.08 |
申请号 |
JP20060287995 |
申请日期 |
2006.10.23 |
申请人 |
HOYA CORP |
发明人 |
ORITA MASAHIRO;NARISHIMA TAKASHI;YANAGIDA HIROAKI |
分类号 |
H05B33/26;H01L51/50;H05B33/10 |
主分类号 |
H05B33/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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