发明名称 P-TYPE SEMICONDUCTOR MATERIAL, SEMICONDUCTOR ELEMENT, ORGANIC ELECTROLUMINESCENT ELEMENT, AND MANUFACTURING METHOD OF P-TYPE SEMICONDUCTOR MATERIAL
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a p-type semiconductor material and a semiconductor element in which band matching is obtained between a positive hole injection layer and which are suitable for an anode electrode formable on a glass substrate and a polymer substrate. <P>SOLUTION: In the p-type semiconductor material, in a chemical compound containing Zn and Se, Ag is made to be contained by 1×10<SP>18</SP>to 5×10<SP>20</SP>cm<SP>-3</SP>. The semiconductor element is equipped with a substrate and a p-type electrode layer which is positioned on this substrate and has either one of the p-type semiconductor material. <P>COPYRIGHT: (C)2008,JPO&INPIT</p>
申请公布号 JP2008108471(A) 申请公布日期 2008.05.08
申请号 JP20060287995 申请日期 2006.10.23
申请人 HOYA CORP 发明人 ORITA MASAHIRO;NARISHIMA TAKASHI;YANAGIDA HIROAKI
分类号 H05B33/26;H01L51/50;H05B33/10 主分类号 H05B33/26
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