| 摘要 |
A non-volatile random access memory device. The non-volatile random access memory device may include a magnetic bit, a write/sense, and a read pulse module. The read pulse module may be configured to send a read pulse signal to the magnetic bit. In addition, a write module may be in communication with the write/sense coil and may be configured to thereby change the magnetic bit between a first magnetic polarity state and a second magnetic polarity state. A read module may be in communication with the write/sense coil and may be configured to detect a first characteristic of the write/sense coil when a read pulse signal is delivered to the magnetic bit in the first magnetic polarity state and to detect a second characteristic of the write/sense coil when a read pulse signal is delivered to the magnetic bit in the second magnetic polarity state.
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