GAN SINGLE-CRYSTAL SUBSTRATE AND METHOD FOR PROCESSING SURFACES OF GAN SINGLE-CRYSTAL SUBSTRATE

摘要

A GaN single-crystal substrate and a method for processing surfaces of the same are provided to enhance production efficiency by preventing warpage. A GaN single-crystal substrate(110) is formed by performing a double-sided polishing process. When a transmittance of the GaN single-crystal substrate is measured by using light having a wavelength range of 370-800 nm, the transmittance of the substrate is 65-90 percent. The GaN single-crystal substrate is characterized in that the light to be irradiated to the GaN single-crystal substrate is from ultraviolet light to infrared light to measure the transmittance of the GaN single-crystal substrate.