| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a pattern forming material excellent in resolution and mask coverage dependency and useful in microfabrication using an electron beam or far-ultraviolet radiation. <P>SOLUTION: The resist material contains a nitrogen-containing organic compound having a nitrogen-containing heterocycle represented by formula (1) and having a molecular weight of ≥380 as a quencher, wherein R<SP>1</SP>represents a 2-20C divalent substituent forming a nitrogen-containing heteroaliphatic ring or a nitrogen-containing heteroaromatic ring in combination with the nitrogen atom bonded at both ends and may contain an oxigen atom, a nitrogen atom, a sulfur atom or a halogen atom; R<SP>2</SP>is an alkylene group which may contain a 2-10C carbonyl group; and R<SP>3</SP>is a 22-50C alkyl group or acyl group which may contain a hydroxyl group, a carbonyl group, an ester group, an ether group or a cyano group. The resist material containing the nitrogen-containing organic compound provides high resolution and satisfactory mask coverage dependency, is useful in microfabrication using an electron beam or far-ultraviolet radiation, and is suitable for use as a fine pattern forming material for VLSI production. <P>COPYRIGHT: (C)2008,JPO&INPIT |
