发明名称 Nonvolatile Memory Device And Method For Accessing Nonvolatile Memory Device
摘要 The present invention provides a nonvolatile memory device that can be used in combination with a plurality of types of memory controllers that are different in number of banks to be simultaneously accessed, the nonvolatile memory device being also capable of achieving high-speed access. The nonvolatile memory device of the present invention includes: a memory area divided into a plurality of banks from/to which data can be read/written independently; and data registers for storing data that has been read from the memory area or that is to be written to the memory area, the data registers being at least equal in number to the banks, and connections between the banks and the data registers are changed in accordance with the number of banks that are to be simultaneously accessed.
申请公布号 US2008109627(A1) 申请公布日期 2008.05.08
申请号 US20050718965 申请日期 2005.11.08
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 TOYAMA MASAYUKI;IZUMI TOMOAKI;TAMURA KAZUAKI;MATSUNO KIMINORI;INOUE MANABU;NAKANISHI MASAHIRO
分类号 G06F12/00 主分类号 G06F12/00
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