METAL PRECURSORS FOR LOW TEMPERATURE DEPOSITION AND METHODS OF FORMING A METAL THIN LAYER AND MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE METAL PRECURSORS

摘要

The present invention provides metal precursors for low temperature deposition. The metal precursors include a metal ring compound including at least one metal as one of a plurality of elements forming a ring. Methods of forming a metal thin layer and manufacturing a phase change memory device including use of the metal precursors is also provided.