METHOD OF PLANARIZING SOLID SURFACE WITH GAS CLUSTER ION BEAM AND SOLID SURFACE PLANARIZING APPARATUS

摘要

Surface roughness of a cycle of about several tens of nanometers (10 nm) to hundreds of microns (100 µm) being present on a solid surface is reduced by irradiation with gas cluster ion beams. There is provided a method of planarizing a solid surface, comprising the irradiation step of when the angle between the normal line of the solid surface and gas cluster ion beams is referred to as an irradiation angle and the irradiation angle at which the distance of interaction between the solid and the cluster having collided with the solid changes to a striking increase referred to as a critical angle, irradiating the solid surface with gas cluster ion beams with the irradiation angle not smaller than the critical angle. The critical angle is 70°.