MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a power device with which a self-alignment forming process of a channel can be simplified and cost can be reduced. SOLUTION: The manufacturing method of a semiconductor device using SiC is provided with a process for forming a first ion injection mask 4 consisting of photoresist on an n+type SiC substrate 1 being a SiC base and on a surface of an n-type SiC epitaxial film 2, a process for injecting ions in a surface layer part of the SiC base through the first ion injection mask 4 and forming a p type base region 5, a process for forming a photoresist film 6 on the SiC base and a surface of the first ion injection mask 4 and heating it, a process for developing the photoresist film 6 and leaving a second ion injection mask 7 consisting of a bridge layer on a side wall of the first ion injection mask 4 and a process for injecting the ions on a surface layer part of the p type base region 5 through the first ion injection mask 4 and the second ion injection mask 7 and forming an n+type source region 8. COPYRIGHT: (C)2008,JPO&INPIT