CIRCUIT AND METHOD FOR BIASING A GALLIUM ARSENIDE (GAAS) POWER AMPLIFIER
摘要
<p>A circuit for biasing a gallium arsenide (GaAs) power amplifier includes a reference voltage generator circuit implemented in a gallium arsenide (GaAs) material system, a field effect transistor (FET) bias circuit implemented in the gallium arsenide material system and adapted to receive an output of the reference voltage generator circuit and adapted to provide an output to a radio frequency (RF) amplifier stage.</p>
申请公布号
WO2008054649(A1)
申请公布日期
2008.05.08
申请号
WO2007US22310
申请日期
2007.10.19
申请人
SKYWORKS SOLUTIONS, INC.;CHANG, SHIAW, W.;ALON, ZIV;METZGER, ANDRE