GROWTH MANIPULATOR OF A VACUUM CHAMBER USED FOR GROWING SEMICONDUCTOR HETEROSTRUCTURES

摘要

The inventive growth manipulator of a vacuum chamber is used for growing semiconductor thin films by means of molecular-beam epitaxy. The inventive manipulator is placed in a vacuum chamber consisting of a body (1) and a lid (2). The manipulator comprises a bar (3) is provided with a heater (4), which is mounted on the lower end thereof and a base flange (5), which is arranged on the top end thereof, and a tubular hollow element (6) provided with the holder (17) of a semiconductor substrate (16) on the lower end thereof. The bar is arranged inside the tubular element and mates with it by means of bearings (7, 8). The tubular element is provided with a drive which is used for carrying out vertical reciprocating motion and is embodied in the form of a bellows (10). The bellows is fixed to the lid of a vacuum chamber and is provided with a compression-extension mechanism (9). The tubular element is provided with a mechanism which is used for rotating it, is fastened to the base flange and comprises a drive (11) and a gear transmission. The base flange is rigidly fixed to the bellows. The invention makes it possible to improve the quality of grown heterostructures.