| 摘要 |
[PROBLEMS] To provide a lithographic coated-type underlayer film forming composition that for preventing of collapse of resist pattern after development in accordance with resist pattern miniaturization, is applied to a multilayer film process by thin-film resist, and that exhibits a low dry etching rate as compared with that of photoresist or semiconductor substrate, and that at substrate working, exhibits satisfactory etching resistance for the substrate worked. [MEANS FOR SOLVING PROBLEMS] There is provided a coated-type underlayer film forming composition for use in lithographic process by multilayer film, comprising a polymer having not only a vinylnaphthalene unit structure but also an acrylic acid unit structure containing an aromatic hydroxyl or hydroxylated ester. Further, there is provided a coated-type underlayer film forming composition, comprising an acrylic acid unit structure wherein an ester containing an alicyclic compound or an ester containing an aromatic compound is contained. |
