| 摘要 |
PROBLEM TO BE SOLVED: To provide a container treatment device by plasma CVD (chemical vapor deposition) where the ununiformity of film deposition treatment to a hollow container caused by the bias of the intensity of plasma generated in a metal cavernous enclosure is solved, and film deposition treatment with variation of film thickness and film quality reduced is performed. SOLUTION: The side face of a waveguide for feeding microwaves is connected with the side face of a cylindrical metal cavernous enclosure having an axis to a direction orthogonal to the axial direction of the waveguide, and a slit in the axial direction of the waveguide is formed at the joined face between the waveguide and the metal cavernous enclosure; thus the space in the waveguide and the space in the metal cavernous enclosure are combined. A waveguide for microwaves by a dielectric ring parallel to the slit, clogging the slit and going around the inside of the metal cavernous enclosure along the inner wall is installed from the side of the metal cavernous enclosure, and a gas introduction tube for introducing a gaseous starting material for plasma is installed in a hollow container installed in the metal cavernous enclosure. COPYRIGHT: (C)2008,JPO&INPIT
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