| 摘要 |
A patterning method includes providing a substrate having an insulator layer established thereon. A silicon layer is established on the insulator layer. A mask is established on at least a portion of the silicon layer. Portions of the silicon layer and the insulator layer are removed to expose portions of the substrate, whereby the silicon layer and insulator layer covered by the mask remain on the substrate. The insulator layer is wet-etched at exposed areas, whereby a height of the insulator layer remains substantially unchanged. The mask and remaining silicon layer are removed.
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