| 摘要 |
A memory device and a repair method thereof are provided to perform repair operation by using latches as many as the number of column addresses without using a fuse. A memory cell(210) includes a number of cells for storing data, and is defined as a special block to store a column address including a defective cell on a fixed region. A start address block(240) stores address information where the special block of the main memory cell starts. A repair information block(250) temporarily stores the column address stored in the special block, and outputs a repair control signal. The special block includes a number of continuous columns constituted with cells without defect.
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