发明名称 |
Low dielectric constant material and method of processing by CVD |
摘要 |
<p>Organofluorosilicate glass films contain both organic species and inorganic fluorines, exclusive of significant amounts of fluorocarbon species. Preferred films are represented by the formula Si v O w C x H y F z . where v+w+x+y+z = 100%, v is from 10 to 35 atomic%, w is from 10 to 65 atomic% y is from 10 to 50 atomic%, x is from 1 to 30 atomic%, z is from 0.1 to 15 atomic%, and x/z is optionally greater than 0.25, wherein substantially none of the filuarine is bonded to the carbon. In one embodiment there is provided a CVD method that includes: providing a substrate within a vacuum chamber; introducing into the vacuum chamber gaseous reagents including a fluorine-providing gas, an oxygen-providing gas and at least one precursor gas selected from an organosilane and an organosiloxane; and applying energy to the gaseous reagents in the chamber to induce reaction of the gaseous reagents and to form the film on the substrate.</p> |
申请公布号 |
EP1918415(A1) |
申请公布日期 |
2008.05.07 |
申请号 |
EP20080150783 |
申请日期 |
2003.12.05 |
申请人 |
AIR PRODUCTS AND CHEMICALS, INC. |
发明人 |
O´NEILL, MARK LEONARD;LUKAS, AARON SCOTT;BITNER, MARK DANIEL;VINCENT, JEAN LOUISE;VRTIS, RAYMOND NICHOLAS;PETERSON, BRIAN KEITH |
分类号 |
C08G83/00;C23C16/30;C03C3/04;C03C14/00;C23C16/40;C23C16/42;H01B3/12;H01L21/31;H01L21/312;H01L21/316;H01L21/768;H01L23/522 |
主分类号 |
C08G83/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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