| 摘要 |
<p>A method for manufacturing a flash memory device is provided to eliminate deformation of an active profile between a cell region and a peripheral region, and to reduce the processing time and costs by deforming only a mask layer pattern. A cell region and a peripheral region are defined on a semiconductor substrate(200), and a gate insulating layer(202) and a conductive layer(204) are formed on the semiconductor substrate. A first mask layer pattern(206) opening a first region is formed on the conductive layer. The conductive layer, the gate insulating layer and the first region of the semiconductor substrate are etched along the first mask layer pattern. The first mask layer pattern is removed, and a second mask layer pattern opening a second region is formed on the conductive layer. The conductive layer, the gate insulating layer and the second region of the semiconductor substrate are etched along the second mask layer pattern, and the second mask layer pattern is removed.</p> |
