发明名称 Process for producing semiconductor device having porous regions
摘要 Disclosed are a semiconductor device having a porous member as an active region, the porous member comprising a plurality of porous regions having different structures or compositions; and a process for producing a semiconductor device, comprising a step of modifying partially a non-porous substrate, and a subsequent step of making the substrate porous.
申请公布号 US5970361(A) 申请公布日期 1999.10.19
申请号 US19970846501 申请日期 1997.04.28
申请人 CANON KABUSHIKI KAISHA 发明人 KUMOMI, HIDEYA;YONEHARA, TAKAO;SATO, NOBUHIKO
分类号 H01L21/02;G01N27/00;H01L21/306;H01L27/12;H01L33/06;H01L33/08;H01L33/12;H01L33/30;H01L33/34;H01L33/42;(IPC1-7):H01L21/76 主分类号 H01L21/02
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