发明名称 |
Process for producing semiconductor device having porous regions |
摘要 |
Disclosed are a semiconductor device having a porous member as an active region, the porous member comprising a plurality of porous regions having different structures or compositions; and a process for producing a semiconductor device, comprising a step of modifying partially a non-porous substrate, and a subsequent step of making the substrate porous.
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申请公布号 |
US5970361(A) |
申请公布日期 |
1999.10.19 |
申请号 |
US19970846501 |
申请日期 |
1997.04.28 |
申请人 |
CANON KABUSHIKI KAISHA |
发明人 |
KUMOMI, HIDEYA;YONEHARA, TAKAO;SATO, NOBUHIKO |
分类号 |
H01L21/02;G01N27/00;H01L21/306;H01L27/12;H01L33/06;H01L33/08;H01L33/12;H01L33/30;H01L33/34;H01L33/42;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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