| 摘要 |
<p>A method of manufacturing a semiconductor device is provided to improve interference capacitance by forming the height of an effective device isolation layer through a single etching process, and to improve cycling defects by preventing the distance between control gates from being reduced. A semiconductor substrate(100) defines an active region by a device isolation layer(110), wherein a gate insulating layer(102) and a floating gate are formed in the active region. A mask is formed on the entire structure including the device isolation layer. A part of the device isolation layer is exposed by removing a part of the mask. A recess is formed on the device isolation layer by etching the exposed device isolation layer using the mask. The mask is removed. A dielectric layer(116) and a control gate are formed on the entire structure including the device isolation layer.</p> |
