| 摘要 |
A manufacturing method of a semiconductor device having a PSOI structure is provided to simplify processes and to prevent a void of a gap fill material, and pattern broken phenomenon caused by silicon grid directional etching. A pad layer(22A,22B) is formed on a substrate(21). A hard mask containing carbon ingredient is formed on the pad layer. A photoresist pattern is formed on the hard mask. A trench(27) is formed on the substrate by etching the substrate, the pad layer and the hard mask using the photoresist patter as an etch barrier. A bottom surface of the trench is exposed by etching a part of polymer which is generated by etching. A recess(101) is formed by performing the isotropic etching to the bottom surface of the trench using the polymer as the etch barrier. The hard mask is removed.
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