| 摘要 |
The invention provides circuitry for writing to and reading from an SRAM cell core (105), an SRAM cell (100), and an SRAM device. In one aspect, the circuitry includes a write circuit coupled to the SRAM cell core that includes at least one write transistor (150). The circuitry also includes a read circuit coupled to the SRAM cell core that includes at least one read transistor (185) having a gate signal in common with the gate signal of the write transistor. The read transistor and the write transistor share a common gate signal, and each have an electrical characteristic, for which the electrical characteristic of the read transistor differs from that of the write transistor.
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