发明名称 |
DRAM having at least three layered impurity regions between channel holes and method of fabricating same |
摘要 |
Disclosed is a dynamic random access memory (DRAM) comprising a transistor having channel holes formed in the channel region thereof and cell gate structures formed in the channel holes. At least three layered impurity regions are formed in a semiconductor substrate between the channel holes and the at least three layered impurity regions form a source region for the transistor.
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申请公布号 |
US7368778(B2) |
申请公布日期 |
2008.05.06 |
申请号 |
US20050210705 |
申请日期 |
2005.08.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE JIN-WOO;KIM YONG-SUNG;CHUNG TAE-YOUNG |
分类号 |
H01L27/108;H01L29/76;H01L29/94;H01L31/119 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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