发明名称 |
Distributed Bragg reflector (DBR) structure in vertical cavity surface emitting laser (VCSEL) diode, method of manufacturing the same, and VCSEL diode |
摘要 |
A DBR structure in a VCSEL diode, a method of manufacturing the DBR structure, and a VCSEL diode are provided. The DBR structure in the VCSEL diode includes: an InAlGaAs layer having a predetermined refractive index and disposed on an InP substrate; a first InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InAlGaAs layer; an InP layer having a lower refractive index than the InAlGaAs layer and disposed on the first InAlAs layer; and a second InAlAs layer having a lower refractive index than the InAlGaAs layer and disposed on the InP layer. Thus, the DBR structure can reduce optical loss due to type-II band line-up at a junction between the InAlGaAs layer and the InP layer, and thus improve device characteristics.
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申请公布号 |
US7369595(B2) |
申请公布日期 |
2008.05.06 |
申请号 |
US20060544832 |
申请日期 |
2006.10.05 |
申请人 |
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE |
发明人 |
KIM KI SOO;HAN WON SEOK;KIM SUNG BOCK;OH DAE KON |
分类号 |
H01S5/00;H01S3/08 |
主分类号 |
H01S5/00 |
代理机构 |
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代理人 |
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地址 |
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