发明名称 INFRARED SENSOR UNIT AND PROCESS OF FABRICATING THE SAME
摘要 An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate (10). A dielectric top layer (12) covers the substrate to conceal the semiconductor device (20) formed in the top surface of the substrate. The thermal infrared sensor (30) carried on a sensor mount (40) which is supported above the semiconductor device by means of a thermal insulation support (52). The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.
申请公布号 KR20080038407(A) 申请公布日期 2008.05.06
申请号 KR20087006427 申请日期 2006.08.16
申请人 MATSUSHITA ELECTRIC WORKS, LTD. 发明人 YAMANAKA HIROSHI;ICHIHARA TSUTOMU;WATABE YOSHIFUMI;TSUJI KOJI;KIRIHARA MASAO;YOSHIHARA TAKAAKI;NISHIJIMA YOICHI;HYODO SATOSHI
分类号 G01J5/20;H01L27/146 主分类号 G01J5/20
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