发明名称 |
INFRARED SENSOR UNIT AND PROCESS OF FABRICATING THE SAME |
摘要 |
An infrared sensor unit has a thermal infrared sensor and an associated semiconductor device commonly developed on a semiconductor substrate (10). A dielectric top layer (12) covers the substrate to conceal the semiconductor device (20) formed in the top surface of the substrate. The thermal infrared sensor (30) carried on a sensor mount (40) which is supported above the semiconductor device by means of a thermal insulation support (52). The sensor mount and the support are made of a porous material which is superimposed on top of the dielectric top layer.
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申请公布号 |
KR20080038407(A) |
申请公布日期 |
2008.05.06 |
申请号 |
KR20087006427 |
申请日期 |
2006.08.16 |
申请人 |
MATSUSHITA ELECTRIC WORKS, LTD. |
发明人 |
YAMANAKA HIROSHI;ICHIHARA TSUTOMU;WATABE YOSHIFUMI;TSUJI KOJI;KIRIHARA MASAO;YOSHIHARA TAKAAKI;NISHIJIMA YOICHI;HYODO SATOSHI |
分类号 |
G01J5/20;H01L27/146 |
主分类号 |
G01J5/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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