Semiconductor circuit arrangement with trench isolation and fabrication method

摘要

An explanation is given of, inter alia, a circuit arrangement containing a trench which penetrates through a charge-storing layer ( 18 ) and a doped semiconductor layer ( 14 ). The trench simultaneously fulfils a multiplicity of functions, namely an insulating function between adjacent components, the patterning of the charge-storing layer and also the subdivision of doping layers of the semiconductor layer ( 14 ).