摘要 |
<p>This disclosure demonstrates successfully using single, polycrystalline, hot pressed ceramic, and thin film Fe doped binary chalcogenides (such as ZnSe and ZnS) as saturable absorbing passive Q-switches. The method of producing polycrystalline ZnSe(S) yields fairly uniform distribution of dopant, large coefficients of absorption (5-50 cm<SUP>-1</SUP>) and low passive losses while being highly cost effective and easy to reproduce. Using these Fe<SUP>2+</SUP>:ZnSe crystals, stable Q-switched output was achieved with a low threshold and the best cavity configuration yielded 13mJ/pulse single mode Q-switched output and 85 mJ in a multipulse regime.</p> |
申请人 |
UNIVERSITY OF ALABAMA AT BIRMINGHAM RESEARCH FOUNDATION;MIROV, SERGEY;GALLIAN, ANDREW;MARTINEZ, ALAN;FEDOROV, VLASIMIR |
发明人 |
MIROV, SERGEY;GALLIAN, ANDREW;MARTINEZ, ALAN;FEDOROV, VLASIMIR |