SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SUCH SEMICONDUCTOR DEVICE AND SUBSTRATE FOR SUCH SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device wherein bonding strength between a semiconductor chip and a substrate is sufficiently improved and generation of cracks due to thermal shock, temperature cycle and the like is surely prevented. The semiconductor device is provided with the semiconductor chip, and a substrate having a bonding region wherein the semiconductor chip is bonded through a metal layer. The metal layer is provided with a Au-Sn-Ni alloy layer and a solder layer over the Au-Sn-Ni alloy layer. An interface between the Au-Sn-Ni alloy layer and the solder layer has irregularity.