| 摘要 |
<p>A semiconductor device is provided to decrease horizontal resistance of a substrate by arranging a device region, such that a horizontal current path is formed along a short side of the semiconductor chip. A planar shape of one surface of a rectangular semiconductor substrate(10) has a long side and a short side. A discrete semiconductor device region(20) is formed on the semiconductor substrate. First and second electrodes are connected to input and output terminals of the device region, respectively, and formed on one surface of the semiconductor substrate. A first current path(CP1) is substantially normal to the one surface of a current path, which is formed on the semiconductor substrate from the first electrode to the second electrode. A second current path(CP2) is substantially parallel to the one surface of the current path. A main direction of the second current path is formed along the short side.</p> |
