METHOD OF MANUFACTURING FERROELECTRIC THIN FILM FOR DATA STORAGE AND METHOD OF MANUFACTURING FERROELECTRIC RECORDING MEDIA USING THE SAME METHOD

摘要

A method for manufacturing a ferroelectric thin film and a method for manufacturing a ferroelectric recording medium are provided to increase recording density of the recording medium by forming uniform nano grains on the ferroelectric thin film. An amorphous TiO2 layer(12) is formed on a substrate(10). A PbO gas atmosphere(200) is formed on the TiO2 layer. The TiO2 layer is mixed with the PbO gas at a temperature between 400 and 800 °C. A PbTiO3 ferroelectric thin film is formed on the substrate. Nano grains with a size between 1 and 20 nm are formed on the PbTiO3 ferroelectric thin film. At least one of a reaction temperature and a reaction time of the TiO2 layer and the PbO gas and a flux of the PbO gas is controlled, such that the size of the nano grain and a stoichiometry of the PbTiO3 ferroelectric thin film are controlled.