PLASMA DOPING METHOD AND PLASMA DOPING APPARATUS

摘要

Before plasma doping treatment, plasma comprising gas containing an element belonging to the same group of the periodic table as a main element constituting a silicon substrate (9), for example, plasma of a monosilane gas, is generated within a vacuum vessel (1) to cover the inner wall of the vacuum vessel (1) with a silicon-containing film. Thereafter, the silicon substrate (9) is subjected to plasma doping treatment.