| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a tunnel type magnetic detection element which can acquire low RA and further high resistance change rate (ΔR/R), and to provide its manufacturing method, related to especially a tunnel type magnetic detection element wherein an insulating barrier layer is made of Al-O. <P>SOLUTION: A second fixed magnetic layer 4c is constituted by laminating a CoFeB layer 4c1 made of CoFeB and an interfacial layer 4c2 made of CoFe or Co from the bottom. The insulating barrier layer 5 made of Al-O is formed on the second fixed magnetic layer 4c. By forming a lamination structure of CoFeB/CoFe/Al-O, the low RA and the high resistance change rate (ΔR/R) can be acquired. Further, fluctuation of the RA and resistance change rate (ΔR/R) can be suppressed compared with a conventional element. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
