| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of using junction leak current measurement or DLTS measurement to easily evaluate quality within a semiconductor wafer, particularly quality not only within a SOI layer of a SOI wafer but also a PW and an EPW. SOLUTION: In the semiconductor wafer evaluating method, at least an oxide film 2 is formed on the surface of the semiconductor wafer, and after part of the oxide film is removed, two holes are formed. A dopant having a conductivity type different from that of the semiconductor to be evaluated is diffused from the two holes 8, 8'. Diffusion portions are formed in the semiconductor to be evaluated and a PN junction is formed. Leak current measurement and/or DLTS measurement is performed between the two diffusion portions for semiconductor wafer evaluation. COPYRIGHT: (C)2008,JPO&INPIT |
