| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device that reduces the electric field strength of an edge region at a maximum blocking voltage. SOLUTION: The semiconductor element has a semiconductor base material 100. The semiconductor base material has a first surface 101, a second surface 102, an internal region 105, an edge region 106 adjacent to the internal region, and a first semiconductor layer 103 of the first conductivity type that is extended up to the internal region and edge region, and furthermore, has at least one active element zone 12 of a second conductivity type that is complementary to the first conductivity type and located in the internal region in the first layer, and an edge structure located in the edge region. COPYRIGHT: (C)2008,JPO&INPIT |
