| 摘要 |
An integrated matching network and method for manufacturing an integrated matching network are provided. The method includes forming ( 405 ) a first die on a substrate, forming ( 410 ) a second die on the substrate, and forming ( 415 ) a metallization layer on the first and second dies. The second die has a capacitance, the metallization layer has an inductance, and the capacitance and inductance together provide a shunt impedance from the first die to the substrate. The integrated matching network includes a first die having a PA ( 101 ), a second die having a capacitor ( 102 ), and a metal interconnect ( 108 ) coupled to the PA and the first capacitor. The metal interconnect ( 108 ) has an inductance. The capacitor ( 102 ) and metal interconnect ( 108 ) form a shunt impedance. |
