| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a photomask that gives sufficient resolution even when hole patterns are arranged along one direction. <P>SOLUTION: The photomask having a pattern to be transferred onto a substrate using an exposure apparatus comprises: a main pattern 501 disposed without periodicity, the pattern being a rectangular main pattern surrounded by a light shielding portion or a semitransparent film and having a longitudinal direction and a latitudinal direction orthogonal to the longitudinal direction; and an assist pattern 502 surrounded by a light shielding portion or a semitransparent film, located close to one end of the longitudinal direction of the main pattern 501, having a length in a direction parallel to the latitudinal direction of the main pattern 501 larger than the length in the latitudinal direction of the main pattern 501, and being not transferred onto the substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
