发明名称 |
Method of manufacturing semiconductor laser device including light shield plate |
摘要 |
Provided is a method of manufacturing a semiconductor laser device having a light shield film comprising: forming a light emission structure by depositing a first clad layer, an active layer and a second clad layer on a substrate; depositing a light shield film and a protection film on the light emission face of the light emission structure; removing the light shield film corresponding to an area of the light emission face of the light emission structure including and above the first clad layer; and removing the protection layer.
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申请公布号 |
US2008102546(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20070889121 |
申请日期 |
2007.08.09 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD |
发明人 |
RYU HAN-YOUL;HA KYOUNG-HO;SUNG YOUN-JOON |
分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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