| 发明名称 |
SEMICONDUCTOR STORAGE DEVICE, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR |
| 摘要 |
According to the present invention, a gettering layer is deposited both on the side surfaces and the bottom surface of a semiconductor chip. The semiconductor chip is then mounted on the board of a package so that a Schottky barrier is formed on the bottom surface. With this structure, metal ions that pass through the board of the package can be captured by the defect layer deposited on the side surfaces and/or the bottom surface of the semiconductor chip, and by the Schottky barrier.
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| 申请公布号 |
US2008099883(A1) |
申请公布日期 |
2008.05.01 |
| 申请号 |
US20070956358 |
申请日期 |
2007.12.14 |
| 申请人 |
NEC ELECTRONICS CORPORATION |
发明人 |
KANAMORI KOHJI;NISHIZAKA TEIICHIROU;KODAMA NORIAKI;KATAYAMA ISAO;MATSUURA YOSHIHIRO;ISHIHARA KAORU;HARADA YASUSHI;MINENAGA NARUAKI;OSHITA CHIHIRO |
| 分类号 |
H01L27/10;H01L29/30;H01L21/322;H01L21/52;H01L21/58;H01L23/26;H01L23/31;H01L23/58;H01L29/00 |
主分类号 |
H01L27/10 |
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