发明名称 |
METHOD OF FABRICATING A NITRIDED SILICON OXIDE GATE DIELECTRIC LAYER |
摘要 |
A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.
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申请公布号 |
US2008102650(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20060554097 |
申请日期 |
2006.10.30 |
申请人 |
ADAMS EDWARD DENNIS;BURNHAM JAY SANFORD;GOUSEV EVGENI;NAKOS JAMES SPIROS;PREUSS HEATHER ELIZABETH;SHEPARD JOSEPH FRANCIS |
发明人 |
ADAMS EDWARD DENNIS;BURNHAM JAY SANFORD;GOUSEV EVGENI;NAKOS JAMES SPIROS;PREUSS HEATHER ELIZABETH;SHEPARD JOSEPH FRANCIS |
分类号 |
H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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