SILICON-CONTAINING LAYER DEPOSITION WITH SILICON COMPOUNDS

摘要

Methods for depositing a silicon-containing film are described. The methods may include delivering a silicon compound to a surface or a substrate, and reacting the silicon compound to grow the silicon-containing film. The silicon compound may be one or more compounds having a formula selected from the group Si₄X₈, Si₄X₁₀, Si₅X₁₀, and Si₅X₁₂, where X is independently a hydrogen or halogen.