| 发明名称 |
SEMICONDUCTOR DEVICE |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To improve heat dissipation from the surface of a semiconductor device and to achieve high-power operations. <P>SOLUTION: The semiconductor device includes: a source electrode 105, a drain electrode, and a gate electrode 107 formed on a barrier layer 104 in contact with the barrier layer 104; and a passivation film 108 formed on the barrier layer 104 so as to cover at least a part of the top surface of the respective electrodes to protect the barrier layer 104 and formed of a plurality of films. The passivation film 108 includes at least a film made of aluminum nitride. <P>COPYRIGHT: (C)2008,JPO&INPIT |
| 申请公布号 |
JP2008103705(A) |
申请公布日期 |
2008.05.01 |
| 申请号 |
JP20070243528 |
申请日期 |
2007.09.20 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
MURATA TOMOHIRO;UENO HIROAKI;ISHIDA HIDETOSHI;UEDA TETSUZO;UEMOTO YASUHIRO;TANAKA TAKESHI;UEDA DAISUKE |
| 分类号 |
H01L21/338;H01L21/28;H01L21/283;H01L29/778;H01L29/812;H01L33/22;H01L33/32;H01L33/44;H01S5/323 |
主分类号 |
H01L21/338 |
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