发明名称 Light Emitting Device
摘要 Power consumption required for charging and discharging a source signal line is reduced in an active matrix EL display device. A bipolar transistor (Bi 1 ) has a base terminal B connected to an output terminal c 1 of an operational amplifier (OP 1 ), a collector terminal C connected to a low power potential (GND), and an emitter terminal E connected to a resistor R 2 . A high power potential (VBH) is a potential in synchronization with a high power potential of a light emitting element. A potential of the output terminal c 1 of the operational amplifier (OP 1 ) is outputted as a buffer low power potential (VBL). The low power potential (VBL) corresponds to a potential difference between the high power potential (VBH) and a high power potential (V 1 ). Accordingly, the low power potential (VBL) can follow the high power potential (VBH), that is a high power potential of the light emitting element.
申请公布号 US2008100227(A1) 申请公布日期 2008.05.01
申请号 US20060596680 申请日期 2006.06.21
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 IWABUCHI TOMOYUKI;MIYAKE HIROYUKI
分类号 G09G3/32;G09G3/20 主分类号 G09G3/32
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