| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a phase-change memory element, and to provide a method for forming a phase change layer applied to the same. SOLUTION: The method for manufacturing a phase-change memory element including a step that supplies a bivalent first precursor, containing germanium (Ge) onto a lower film, where the phase-change layer is formed is provided. The phase-change layer is formed with one method among MOCVD, cyclic-CVD and ALD; in this case, the composition of the phase-change layer can be controlled by pressure, deposition temperature or reaction gas supplied amount; and the pressure scope may be 0.001 Torr to 10 Torr, the deposition temperature scope can be 150°C to 350°C, and the reaction gas supplied amount can be 0 to 1 slm. COPYRIGHT: (C)2008,JPO&INPIT
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