发明名称 |
METHOD FOR FABRICATING A SEMICONDUCTOR STRUCTURE |
摘要 |
A method for fabricating a semiconductor including defining a first component region and a second component region in a semiconductor body is provided. A first epitaxial layer is formed through the first component region. A second epitaxial layer is formed over the first epitaxial layer, including configuring the physical dimensions of a first active zone of the first component region independent of a second active zone of the second component region via the first epitaxial layer and the second epitaxial layer. In one embodiment, the first component is a radio-frequency transistor and the second component is a varactor.
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申请公布号 |
US2008102593(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20060553704 |
申请日期 |
2006.10.27 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
MEISTER THOMAS;SCHAFER HERBERT;BOCK JOSEF;LACHNER RUDOLF |
分类号 |
H01L21/20;H01L21/8222;H01L27/082;H01L27/102;H01L29/70;H01L31/11 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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