| 摘要 |
PROBLEM TO BE SOLVED: To provide a thick liner film where stress is applied to a channel region, and to securely form a contact with respect to a source region and a drain region in a semiconductor device having a MOS transistor. SOLUTION: The semiconductor device is provided with the MOS transistor which is formed on a substrate 100 and has a channel region, a gate insulating film 102, a gate electrode 103, the source region, and the drain region 105. The device is also provided with: the liner film 122 which covers the gate electrode 103, the source region and the drain region 105, and applies stress to the channel region; and a contact plug 111 connected to the gate electrode 103, the source region, or the drain region 105. A cross section in a part above an upper face of the liner film 122 of the contact plug 111 is larger than that in a part below the upper face of the liner film 122 of the contact plug 111. COPYRIGHT: (C)2008,JPO&INPIT
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