| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of easily ensuring a contact area of a portion between a conductor plug and a metal silicide layer. SOLUTION: A gate electrode 12 is formed on a semiconductor substrate 11. A sidewall insulating film 14 is formed on the side surface of the gate electrode 12. An impurity region 15 is formed on the semiconductor substrate 11 using the gate electrode 12 and the sidewall insulating film 14 as a mask. A metal silicide film 16 is formed on the surface of the impurity region 15. After the metal silicide layer 16 is formed, etching is executed to cause an edge on the bottom of the sidewall insulating film 14 to retract to the gate electrode 12 side. A liner film 17 and an interlayer insulating film 18 are formed on the semiconductor substrate 11 subjected to the etching, and then, a contact hole 19 is formed on the interlayer insulating film 18 and the liner film 17. The contact hole 19 is filled with a conductor, thereby forming a conductor plug 20. COPYRIGHT: (C)2008,JPO&INPIT
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