发明名称 |
Method for forming a robust mask with reduced light scattering |
摘要 |
A mask and method for forming the same including carrying out a photolithographic patterning process the method including providing a substantially light transparent portion; forming a substantially light shielding layer disposed over the substantially light transparent portion; forming at least one barrier layer disposed over the substantially light shielding layer; forming a resist layer disposed over the at least one barrier layer; patterning the resist layer for producing a circuitry pattern; and, carrying out an etching process according to the circuitry pattern to expose a portion of the substantially light transparent portion to form a mask.
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申请公布号 |
US2008102379(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20060590257 |
申请日期 |
2006.10.31 |
申请人 |
WU KEN;HSIEH HUNG-CHANG;HUNG CHANG-CHENG;HSU LUKE;HSIEH REN-GUEY;LEE HSIN-CHANG;CHEN CHIA-JEN |
发明人 |
WU KEN;HSIEH HUNG-CHANG;HUNG CHANG-CHENG;HSU LUKE;HSIEH REN-GUEY;LEE HSIN-CHANG;CHEN CHIA-JEN |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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