发明名称 |
Phase Change Memory, Phase Change Memory Assembly, Phase Change Memory Cell, 2D Phase Change Memory Cell Array, 3D Phase Change Memory Cell Array and Electronic Component |
摘要 |
A phase change memory having a memory material layer consisting of a phase change material, and a first and second electrical contact which are located at a distance from one another and via which a switching zone of the memory material layer can be traversed by a current signal, wherein the current signal can be used to induce a reversible phase change between a crystalline phase and an amorphous phase and thus a change in resistance of the phase change material in the switching zone. The invention also relates to a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array and an electronic component.
|
申请公布号 |
US2008101109(A1) |
申请公布日期 |
2008.05.01 |
申请号 |
US20040576760 |
申请日期 |
2004.10.19 |
申请人 |
HARING-BOLIVAR PETER;BECHEVET BERNARD;SOUSA VERONIQUE;KIM DAE-HWANG;KURZ HEINRICH;MERGET FLORIAN |
发明人 |
HARING-BOLIVAR PETER;BECHEVET BERNARD;SOUSA VERONIQUE;KIM DAE-HWANG;KURZ HEINRICH;MERGET FLORIAN |
分类号 |
G11C11/00;H01L27/24;H01L45/00 |
主分类号 |
G11C11/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|