| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a rear irradiation type imaging element which can stabilize gettering capability and prevent an increase in dark current, a rear irradiation type imaging element and an imaging apparatus employing the same. SOLUTION: The manufacturing method has a process including a first step S11 of forming a photoelectric conversion region and a charge transfer section for an SOI substrate consisting of a first semiconductor supporting substrate and a conductive semiconductor layer formed thereon via an insulating layer; a second step S12 of fixing on the second semiconductor supporting substrate; third steps S13, S14 of removing the first semiconductor supporting substrate and the insulating layer from the SOI substrate; a fourth step S15 of exposing the gettering region on the surface of the semiconductor layer to form a low-temperature oxidation film; and a fifth step S18 of depositing a thin film on the exposed surface of the SOI substrate by CVD processing. COPYRIGHT: (C)2008,JPO&INPIT
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